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Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.
IEEE Transactions on Nuclear Science, 56(1), p.202 - 207, 2009/02
Times Cited Count：36 Percentile：90.64(Engineering, Electrical & Electronic)SET pulse-widths were measured as a function of LET by using pulse capture circuits and were simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates LET dependence of SET pulse-widths.
Harris, R. D.*; Imaizumi, Mitsuru*; Walters, R. J.*; Lorentzen, J. R.*; Messenger, S. R.*; Tischler, J. G.*; Oshima, Takeshi; Sato, Shinichiro; Sharps, R. P.*; Fatemi, N. S.*
IEEE Transactions on Nuclear Science, 55(6), p.3502 - 3507, 2008/12
Times Cited Count：8 Percentile：49.01(Engineering, Electrical & Electronic)The performance of triple junction InGaP/GaAs/Ge solar cells have been studied following low temperature irradiation while using low intensity illumination. High energy electron and proton irradiations have been performed with cell characterization carried out in situ at the irradiation temperature with no intermediate temperature changes. As such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements which permitted the extraction of the four principle solar cell parameters: short circuit current, open circuit voltage, maximum power, and fill factor. In addition, quantum efficiency measurements were made prior to and following the irradiations. The low temperature irradiations were followed by a room temperature anneal to determine if any subsequent recovery was present.
